AD8343 |
RFQ for AD8343 Required Field |
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| Technical/Catalog Information | AD8343ARU |
| Vendor | Analog Devices Inc |
| Category | RF and RFID |
| RF Type | Cellular, PCS |
| Package / Case | 14-TSSOP |
| Frequency | 0Hz ~ 2.5GHz |
| Features | Active Mixer |
| Packaging | Tube |
| Drawing Number | * |
| RoHS Status | RoHS Non-Compliant |
| Other Names | AD8343ARU AD8343ARU |
| Product | Manufacturers | Pack | D/C |
| AD8343 | - | new | - |
The AD8343 is a high-performance broadband active mixer. Having wide bandwidth on all ports and very low intermodulation distortion, the AD8343 is well suited for demanding transmit or
receive channel applications.
The AD8343 provides a typical conversion gain of 7.1 dB. The integrated LO driver supports a 50 Ω differential input impedance with low LO drive level, helping to minimize external component count.
The open-emitter differential inputs may be interfaced directly to a differential filter or driven through a balun (transformer) to provide a balanced drive from a single-ended source.
The open-collector differential outputs may be used to drive a differential IF signal interface or converted to a single-ended signal through the use of a matching network or transformer.
When centered on the VPOS supply voltage, the outputs may swing ±1 V.
The LO driver circuitry typically consumes 15 mA of current. Two external resistors are used to set the mixer core current for required performance resulting in a total current of 20 mA to 60 mA. This corresponds to power consumption of 100 mW to 300 mW with a single 5 V supply.
The AD8343 is fabricated on Analog Devices’ proprietary, highperformance 25 GHz silicon bipolar IC process. The AD8343 is available in a 14-lead TSSOP package. It operates over a –40℃ to +85°C temperature range. A device-populated evaluation board is available to facilitate device matching.
Typical Application |
Features |
| Cellular Base Stations Wireless LAN Satellite Converters SONET/SDH Radio Radio Links RF Instrumentation | High-Performance Active Mixer Broadband Operation to 2.5 GHz Conversion Gain: 7.1 dB Input IP3: 16.5 dBm LO Drive:–10 dBm Noise Figure: 14.1 dB Input P1 dB: 2.8 dBm Differential LO, IF and RF Ports 50ΩLO Input Impedance Single-Supply Operation: 5 V @ 50 mA Typical Power-Down Mode @ 20μA Typical |
VPOS Quiescent Voltage . . . . . . . . . . . . . . . . . . . . . . . .................. 5.5 V
OUTP, OUTM Quiescent Voltage . . . . . . . . . . . . . . . ....................... 5.5 V
INPP, INPM Voltage Differential . . . . . . . . . . . . . . . .....................500 mV
Internal Power Dissipation (TSSOP)2 . . . . . . . . . . . .................. 320 mW
θJA (TSSOP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .................. 125°C/W
Maximum Junction Temperature . . . . . . . . . . . . . . . . .................. 125°C
Operating Temperature Range . . . . . . . . . . .............. –40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . ............–65°C to +150°C
Lead Temperature Range (Soldering 60 sec) . . . . . . . . .............. 300°C
NOTES
1Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may effect device reliability.
2A portion of the device power is dissipated by the external bias resistors R3 and R4.
